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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 FEATURES Power dissipation PCM: 0.15 W (Tamb=25) TRANSISTOR (NPN) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=6V, IC=0.1mA IC=100 mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC= 10mA 180 50 0. 0. 95 A 025 2. 80 A 05 0. 1. 60 A0. 05 unless otherwise specified) Test conditions MIN 50 50 6 0.1 0.1 150 800 TYP MAX UNIT V V V Ic=100A, IE=0 Ic= 100A, IB=0 IE=100A, IC=0 VCB=50 V , IE=0 VEB= 6V , IC=0 0. 35 2. 92 A0. 05 1. 9 A A VCE=6V, IC=1mA 0.3 1 V V MHz fT CLASSIFICATION OF hFE(1) Marking Range LE 150-300 LF 250-500 LG 400-800 |
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